SI4946BEY_09 Datasheet, PDF (5/10 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) 175 °C MOSFET

Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8
7
6
5
4
3
2
1
0
0
25 50 75 100 125 150 175
T_C - Case Temperature (°C)
Current Derating*
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100 125 150 175
T_C - Case Temperature (°C)
Power, Junction-to-Case
100
10
T_A
=
L · I_D
BV - V_DD
1
0.000001
0.00001
0.0001
0.001
T_A - Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation P_D is based on T_J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
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