SI4946BEY_09 Datasheet, PDF (4/10 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) 175 °C MOSFET

Si4946BEY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
0.10
0.08
10
T_J = 175 °C
0.06
I_D = 5.3 A
T_J = 150 °C
0.04
T_J = 25 °C
0.02
T_J = 25 °C
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
3.0
2.8
2.6
I_D = 250 µA
2.4
2.2
2.0
1.8
1.6
1.4
1.2
- 50 - 25 0
25 50 75 100 125 150 175
T_J - Temperature (°C)
Threshold Voltage
100
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
25
20
15
10
5
0
0.01
0.1
1
10
100
1000
Time (s)
Single Pulse Power, Junction-to-Ambient
www.vishay.com
4
10
Limited by R_DS(on)*
100 µs
1
1 ms
10 ms
0.1
T_A = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.01
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09