SI4946BEY_09 Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 60-V (D-S) 175 °C MOSFET

Si4946BEY
Vishay Siliconix
Dual N-Channel 60-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
60
0.041 at V_GS = 10 V
0.052 at V_GS = 4.5 V
I_D (A)
6.5
5.8
Q_g (Typ.)
9.2 nC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 175 °C Maximum Junction Temperature
• 100 % R_g Tested
• Compliant to RoHS directive 2002/95/EC
D₁
D₂
G₁
G₂
Top View
Ordering Information: Si4946BEY-T1-E3 (Lead (Pb)-free)
Si4946BEY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
T_C = 25 °C
6.5
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
5.5
5.3^{a, b}
Pulsed Drain Current
T_A = 70 °C
4.4^{a, b}
A
I_DM
30
Continuous Source Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
3.1
2^{a, b}
Avalanche Current
Single-Pulse Avalanche Energy
L = 0 1 mH
I_AS
12
E_AS
7.2
mJ
T_C = 25 °C
3.7
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
2.6
2.4^{a, b}
W
T_A = 70 °C
1.7^{a, b}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum Junction-to-Ambient^{a, c}
t ≤ 10 s
R_thJA
50
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
33
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
d. Maximum under Steady State conditions is 110 °C/W.
Maximum
62.5
41
Unit
°C/W
Document Number: 73411
S09-2434-Rev. C, 16-Nov-09
www.vishay.com
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