SI4564DY Datasheet, PDF (5/12 Pages) Vishay Siliconix – N- and P-Channel 40 V (D-S) MOSFET

Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.10
10
0.08
T_J = 150 °C
1
0.06
I_D = 8 A
T_J = 25 °C
0.1
0.01
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.04
T_J = 125 °C
0.02
T_J = 25 °C
0.00
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
60
0.2
48
0
36
- 0.2
- 0.4
I_D = 5 mA
24
I_D = 250 μA
12
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
100
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
Limited by R_DS(on)*
10
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
1 ms
1
10 ms
0.1
T_A = 25 °C
Single Pulse
0.01
BVDSS Limited
100 ms
1s
10 s
DC
0.01
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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