English
Language : 

SI4564DY Datasheet, PDF (2/12 Pages) Vishay Siliconix – N- and P-Channel 40 V (D-S) MOSFET
◁
Si4564DY
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
VGS = 0 V, ID = - 250 µA
ID = 250 µA
ID = - 250 µA
ID = 250 µA
ID = - 250 µA
VDS = VGS, ID = 250 µA
VDS = VGS, ID = - 250 µA
VDS = 0 V, VGS = ± 16 V
VDS = 0 V, VGS = ± 20 V
VDS = 40 V, VGS = 0 V
VDS = - 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS = - 40 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 10 V
VGS = 10 V, ID = 8 A
VGS = - 10 V, ID = - 8 A
VGS = 4.5 V, ID = 5 A
VGS = - 4.5 V, ID = - 5 A
VDS = 15 V, ID = 8 A
VDS = - 15 V, ID = - 8 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 20 V, VGS = 10 V, ID = 10 A
Qg
VDS = - 20 V, VGS = - 10 V, ID = - 10 A
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 10 A
Qgs
P-Channel
Qgd
VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A
Gate Resistance
Rg
f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ.a Max. Unit
40
- 40
0.8
- 1.2
20
- 20
V
40
- 34
- 4.1
5.0
mV/°C
2.0
V
- 2.5
± 100
nA
± 100
1
-1
µA
10
- 10
A
0.0145 0.0175
0.0175 0.021
Ω
0.017 0.020
0.0232 0.028
27
S
25
855
2000
120
pF
240
48
202
20.5 31
41.5 63
9.8
15
21.7 33
nC
2.6
5.6
2.6
9.8
0.3 1.5 3.0
Ω
1.3 6.4 12.8
www.vishay.com
2
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10
 ▷