SI4564DY Datasheet, PDF (4/12 Pages) Vishay Siliconix – N- and P-Channel 40 V (D-S) MOSFET

Si4564DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
40
10
V_GS = 10 V thru 4 V
32
8
V_GS = 3 V
24
6
16
4
T_C = 25 °C
8
0
0.0
0.025
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
2
0
0.0
1200
T_C = 125 °C
0.6
1.2
T_C = - 55 °C
1.8
2.4
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.022
0.019
0.016
0.013
V_GS = 4.5 V
V_GS = 10 V
0.010
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 10 V
6
V_DS = 20 V
4
V_DS = 30 V
960
C_iss
720
480
240
C_oss
C_rss
0
0
8
16
24
32
40
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 8 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
2
0.8
0
0.0
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4
4.4
8.8
13.2
17.6
22.0
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 65922
S10-0455-Rev. B, 22-Feb-10