SI4542DY-T1-GE3 Datasheet, PDF (5/10 Pages) Vishay Siliconix – N-and P-Channel 30-V (D-S) MOSFET

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
40
40
V_GS = 10 V thru 5 V
32
32
4V
24
24
Si4542DY
Vishay Siliconix
T_C = - 55 °C
25 °C
125 °C
16
16
8
3V
2, 1 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.10
0.08
0.06
0.04
V_GS = 4.5 V
0.02
V_GS = 10 V
0.00
0
8
16
24
32
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
8
I_D = 6.1 A
6
4
2
0
0
7
14
21
28
35
Q_g - Total Gate Charge (nC)
Gate Charge
8
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3200
C_iss
2400
1600
800
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.75
1.50
V_GS = 10 V
I_D = 6.1 A
1.25
1.00
0.75
0.50
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70666
S09-0868-Rev. G, 18-May-09
www.vishay.com
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