SI4542DY-T1-GE3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-and P-Channel 30-V (D-S) MOSFET

Si4542DY
Vishay Siliconix
N- and P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
N-Channel
30
0.025 at V_GS = 10 V
0.035 at V_GS = 4.5 V
P-Channel
- 30
0.032 at V_GS = - 10 V
0.045 at V_GS = - 4.5 V
I_D (A)
6.9
5.8
- 6.1
- 5.1
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Ordering Information: Si4542DY-T1-E3 (Lead (Pb)-free)
Si4542DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
S₂
G₂
G₁
S₁
N-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
- 30
V
V_GS
± 20
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
6.9
- 6.1
5.5
- 4.9
A
Pulsed Drain Current
I_DM
40
- 40
Continuous Source Current (Diode Conduction)^a
I_S
1.7
- 1.7
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2.0
1.3
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes:
a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol
R_thJA
N- or P-Channel
62.5
Unit
°C/W
Document Number: 70666
S09-0868-Rev. G, 18-May-09
www.vishay.com
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