SI4542DY-T1-GE3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-and P-Channel 30-V (D-S) MOSFET

Si4542DY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
40
40
V_GS = 10 V thru 5 V
32
4V
30
24
16
8
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.05
20
10
0
0
3000
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.04
0.03
V_GS = 4.5 V
0.02
0.01
V_GS = 10 V
0.00
0
10
20
30
40
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 6.9 A
8
2500
C_iss
2000
1500
1000
C_oss
500
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 6.9 A
1.4
6
1.2
4
1.0
2
0.8
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 70666
S09-0868-Rev. G, 18-May-09
www.vishay.com
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