SI4500BDY_06 Datasheet, PDF (5/9 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
2
1
Duty Cycle = 0.5
Si4500BDY
Vishay Siliconix
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- ⁴
10-³
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R _thJA = 75 °C/W
3. T _JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10- ²
10- ¹
1
10
100
600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- ⁴
10- ³
10- ²
10- ¹
1
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
www.vishay.com
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