SI4500BDY_06 Datasheet, PDF (4/9 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted
30
0.08
T_J = 150 °C
10
0.07
0.06
I_D = 9.1 A
0.05
0.04
I_D = 3.3 A
0.03
T_J = 25 °C
0.02
0.01
0
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.4
I_D = 250 µA
0.2
0.0
- 0.2
- 0.4
- 0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
80
70
60
50
40
30
20
10
0
0.001 0.01 0.1
1
10
Time (sec)
Single Pulse Power
100 600
100
r_DS(on) Limited
10
I_DM Limited
P(t) = 0.0001
P(t) = 0.001
1
I_D(on)
Limited
0.1
T_A = 25 °C
Single Pulse
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
dc
0.01
BV_DSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
Safe Operating Area
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4
Document Number: 72281
S-61005-Rev. C, 12-Jun-06