SI4500BDY_06 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Complementary MOSFET Half-Bridge (N- and P-Channel)

Si4500BDY
Vishay Siliconix
Complementary MOSFET Half-Bridge (N- and P-Channel)
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
N-Channel
20
0.020 at V_GS = 4.5 V
0.030 at V_GS = 2.5 V
P-Channel - 20
0.060 at V_GS = - 4.5 V
0.100 at V_GS = - 2.5 V
I_D (A)
9.1
7.5
- 5.3
- 4.1
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4500BDY-T1
Si4500BDY-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET^® Power MOSFET
S₂
G₂
D
G₁
S₁
Pb-free
Available
RoHS*
COMPLIANT
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
10 sec Steady State 10 sec Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
± 12
- 20
V
± 12
Continuous Drain Current (T_J = 150 °C)^a,b
T_A = 25 °C
T_A = 70 °C
I_D
9.1
7.3
6.6
- 5.3
- 3.8
5.3
- 4.9
- 3.1
A
Pulsed Drain Current
I_DM
30
- 20
Continuous Source Current (Diode Conduction)^a,b
I_S
2.1
1.1
- 2.1
- 1.1
Maximum Power Dissipation^a,b
T_A = 25 °C
T_A = 70 °C
P_D
2.5
1.6
1.3
0.8
2.5
1.6
1.3
W
0.8
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on FR4 Board.
b. t ≤ 10 sec.
t ≤ 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
N-Channel
Typ
Max
40
50
75
95
20
22
P-Channel
Typ
Max
41
50
75
95
23
26
Unit
°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72281
S-61005-Rev. C, 12-Jun-06
www.vishay.com
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