SI4491EDY Datasheet, PDF (5/9 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

New Product
Si4491EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
Limited by R_DS(on)*
10
1
0.1
30
100 μs
1 ms
24
10 ms
18
100 ms
1s
12
DC, 10 s
0.01
T_A = 25 °C
Single Pulse
0.001
BVDSS Limited
0.1
1
10
100
V_DS - Drain-to-Source Voltage (V)
* V_GS > minimum V_GS at which R_DS(on) is specified
Safe Operating Area, Junction-to-Ambient
6
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
8.8
1.8
6.6
1.4
4.4
0.9
2.2
0.5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power Junction-to-Foot
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Junction-to-Ambient
* The power dissipation P_D is based on T_J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63866
For technical questions, contact: [e-mail]
www.vishay.com
S12-2337-Rev. B, 01-Oct-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000