SI4491EDY Datasheet, PDF (4/9 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

New Product
Si4491EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
I_D = 17.3 A
8
V_DS = 15 V
6
V_DS = 7.5 V
4
V_DS = 24 V
2
1.60
I_D = 13A
1.35
1.10
0.85
V_GS = 10 V
V_GS = 4.5 V
0
0
100
30
60
90
120
Q_g - Total Gate Charge (nC)
Gate Charge
10
T_J = 150 °C
1
0.1
0.0
T_J = 25 °C
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
2.5
I_D = 250 μA
2.15
1.8
1.45
0.60
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.020
I_D = 13 A
0.015
0.010
0.005
T_J = 25 °C
T_J = 125 °C
0.000
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
1.1
- 50 - 25
0 25 50 75 100 125 150
T_J - Temperature (°C)
Threshold Voltage
0
0.01
0.1
1
10
Time (s)
100
600
Single Pulse Power, Junction-to-Ambient
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Document Number: 63866
4
S12-2337-Rev. B, 01-Oct-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000