SI4491EDY Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

New Product
Si4491EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.015
T_J = 25 °C
0.012
0.009
10^-02
10^-03
10^-04
10^-05
T_J = 150 °C
0.006
0.003
10^-06
10^-07
10^-08
T_J = 25 °C
0.000
0
6
12
18
24
30
V_GS - Gate-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
10^-09
0
6
12
18
24
30
36
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
60
10
V_GS = 10 V thru 5 V
V_GS = 4 V
8
45
30
15
V_GS = 3 V
0
0
0.5
1
1.5
2
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
6
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.014
7200
0.011
V_GS = 4.5 V
6000
C_iss
4800
0.008
0.005
V_GS = 6 V
V_GS = 10 V
3600
2400
1200
C_oss
C_rss
0.002
0
15
30
45
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 63866
For technical questions, contact: [e-mail]
www.vishay.com
S12-2337-Rev. B, 01-Oct-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000