SI4477DY-T1-GE3 Datasheet, PDF (5/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
25
20
15
10
5
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Current Derating*
8
2.0
Si4477DY
Vishay Siliconix
1.6
6
1.2
4
0.8
2
0.4
0
0
25
50
75
100 125 150
T_C - Case Temperature (°C)
Power, Junction-to-Foot
0.0
0
25
50
75
100 125 150
T_A - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation P_D is based on T_J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 64829
S09-0858-Rev. A, 18-May-09
www.vishay.com
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