SI4477DY-T1-GE3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si4477DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
1.5
V_GS = 5 V thru 2.5 V
1.2
45
V_GS = 2 V
30
15
0
0.0
0.016
V_GS = 1.5 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.9
0.6
T_C = 25 °C
0.3
T_C = 125 °C
0.0
T_C = -- 55 °C
0.0
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
6000
0.012
0.008
0.004
V_GS = 2.5 V
V_GS = 4.5 V
0.000
0
15
30
45
60
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6
I_D = 18 A
V_DS = 10 V
4
5000
C_iss
4000
3000
2000
1000
C_oss
C_rss
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 18 A
1.5
V_GS = 4.5 V
1.2
V_DS = 5 V
V_DS = 15 V
2
0.9
V_GS = 2.5 V
0
0
20
40
60
80
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 64829
S09-0858-Rev. A, 18-May-09
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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