SI4477DY-T1-GE3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

P-Channel 20-V (D-S) MOSFET
Si4477DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 20
0.0062 at V_GS = - 4.5 V
0.0105 at V_GS = - 2.5 V
I_D (A)^d
- 26.6
- 20.6
Q_g (Typ.)
59 nC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
• Adapter Switch
- Notebook
S
- Game Station
G
Top View
Ordering Information: Si4477DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
Pulsed Drain Current
T_A = 70 °C
I_DM
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
T_C = 25 °C
T_A = 25 °C
I_S
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
Operating Junction and Storage Temperature Range
T_A = 70 °C
T_J, T_stg
D
P-Channel MOSFET
Limit
- 20
± 12
- 26.6
- 21.3
- 18^{a, b}
- 14.5^{a, b}
- 60
- 5.5
- 2.5^{a, b}
30
45
6.6
4.2
3^{a, b}
1.95^{a, b}
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
Maximum Junction-to-Foot
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Maximum under Steady State conditions is 80 °C/W.
d. Based on T_C = 25 °C.
t ≤ 10 s
Steady State
Document Number: 64829
S09-0858-Rev. A, 18-May-09
Symbol
R_thJA
R_thJF
Typical
34
15
Maximum
41
19
Unit
°C/W
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