IRFR9214 Datasheet, PDF (5/8 Pages) Vishay Siliconix – Power MOSFET

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
T_C , Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
V_DS
V_GS
R_G
R_D
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+_VDD
Fig. 10a - Switching Time Test Circuit
V_GS
10 %
t_d(on) t_r
t_d(off) t_f
90 %
V_DS
Fig. 10b - Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t₂
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T_J= P _DM x Z _thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91282
S-81392-Rev. A, 07-Jul-08
www.vishay.com
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