IRFR9214 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Power MOSFET

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
400
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
300
C_iss
200
100
C_oss
C_rss
0
1
10
100
-V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
10
T_J = 150°C
1
T_J = 25°C
0.1
1.0
V_GS = 0 V
2.0
3.0
4.0
5.0
V_SD,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
ID = -1.7 A
16
12
V_DS =-200V
V_DS =-125V
V_DS =-50V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
3
6
9
12
15
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10
100us
1
1ms
T_C = 25 °C
T_J = 150 °C
Single Pulse
0.1
10
10ms
100
1000
-V_DS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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4
Document Number: 91282
S-81392-Rev. A, 07-Jul-08