IRFR9214 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Power MOSFET

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
- 250
V_GS = - 10 V
3.0
14
3.1
6.8
Single
S
DPAK
IPAK
(TO-252)
(TO-251)
G
D
P-Channel MOSFET
FEATURES
• P-Channel
• Surface Mount (IRFR9214/SiHFR9214)
• Straight Lead (IRFU9214/SiHFU9214)
• Advanced Process Technology
• Fast Switching
• Fully Avalanche Rated
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free
IRFR9214PbF
SiHFR9214-E3
SnPb
IRFR9214
SiHFR9214
Note
a. See device orientation.
DPAK (TO-252)
IRFR9214TRLPbF^a
SiHFR9214TL-E3^a
IRFR9214TRL^a
SiHFR9214TL^a
DPAK (TO-252)
IRFR9214TRPbF^a
SiHFR9214T-E3^a
IRFR9214TR^a
SiHFR9214T^a
IPAK (TO-251)
IRFU9214PbF
SiHFU9214-E3
IRFU9214
SiHFU9214
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at - 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Repetitive Avalanche Current^a
Repetitive Avalanche Energy^a
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
T_C = 25 °C
E_AS
I_AR
E_AR
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T_J = 25 °C, L = 27 mH, R_G = 25 Ω, I_AS = - 2.7 A (see fig. 12).
c. I_SD ≤ - 2.7 A, dI/dt ≤ 600 A/µs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
- 250
± 20
- 2.7
- 1.7
- 11
0.40
100
- 2.7
5.0
50
- 5.0
- 55 to + 150
260^d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91282
S-81392-Rev. A, 07-Jul-08
www.vishay.com
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