IRFB9N65A Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

IRFB9N65A, SiHFB9N65A
Vishay Siliconix
10.0
8.0
V_DS
V_GS
R_G
R_D
D.U.T.
+
- ^VDD
10V
6.0
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
4.0
V_DS
2.0
90 %
0.0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
10 %
V_GS
t_d(on) t_r
t_d(off) t_f
Fig. 10b - Switching Time Waveforms
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
P_DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t1 / t 2
2. Peak T _J = P _DM x Z _thJC + T_C
0.0001
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15 V
V _DS
t_p
V_DS
L
Driver
R_G
20 V
t_p
D.U.T.
I_AS
0.01 Ω
+
- ^VD^AD _A
A
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91104
S-81243-Rev. B, 21-Jul-08
I_AS
Fig. 12b - Unclamped Inductive Waveforms
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