IRFB9N65A Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

IRFB9N65A, SiHFB9N65A
Vishay Siliconix
2000
1600
1200
800
V_GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
Coss
400
Crss
0
A
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20 _{ID = 5.2A}
16
12
V_DS = 520V
V_DS = 325V
V_DS = 130V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
Q_G, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100
10
T_J = 150° C
1
T_J = 25° C
V_GS = 0 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V_SD ,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
10us
10
100us
1ms
1
10ms
T_C = 25°C
T_J = 150°C
Single Pulse
0.1
10
100
1000
10000
V_DS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91104
S-81243-Rev. B, 21-Jul-08