IRFB9N65A Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=650V, Rds(on)max=0.93ohm, Id=8.5A)

IRFB9N65A, SiHFB9N65A
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
T_J = 150° C
T_J = 25° C
1
1
0.1
0.1
20µs PULSE WIDTH
4.5V _{TJ= 25 °C}
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
V _DS= 100V
20µs PULSE WIDTH
0.1
4.0
5.0
6.0
7.0
8.0
9.0
V_GS , Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
10
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
4.5V
1
0.1
1
20µs PULSE WIDTH
TJ= 150 °C
10
100
V_DS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
3.0 _{ID = 5.2A}
2.5
2.0
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature ( ^°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91104
S-81243-Rev. B, 21-Jul-08
www.vishay.com
3