IRF9630S Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

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V_DS
Vary t_p to obtain
required I_AS
R_g
- 10 V
t_p
L
D.U.T.
I_AS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
I_AS
V_DS
V_DD
t_p
V_DS
Fig. 12b - Unclamped Inductive Waveforms
1200
1000
800
I_D
Top - 2.9 A
- 4.1 A
Bottom - 6.5 A
600
400
200
V_DD = - 50 V
0
25
50
75
100
125
150
91085_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
IRF9630S, SiHF9630S
Vishay Siliconix
- 10 V
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
-
D.U.T. ^{+ VDS}
V_GS
- 3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
S16-0754-Rev. D, 02-May-16
5
Document Number: 91085
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