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IRF9630S Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
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101
150 °C
25 °C
100
10-1
0.5
91085_07
VGS = 0 V
1.5
2.5
3.5
4.5
- VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
103
5
2
102
5
2
10
5
2
1
5
2
0.1
0.1 2
Operation in this area limited
by RDS(on)
10 µs
100 µs
1 ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
5 1 2 5 10 2 5 102 2 5 103
91085_08
- VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10
IRF9630S, SiHF9630S
Vishay Siliconix
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
91085_09
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
Rg
RD
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VGS
10 %
td(on) tr
td(off) tf
90 %
VDS
Fig. 10b - Switching Time Waveforms
1 D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10-2
10-5
91085_11
Single Pulse
(Thermal Response)
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (s)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1
10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0754-Rev. D, 02-May-16
4
Document Number: 91085
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