IRF9630S Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)

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IRF9630S, SiHF9630S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient 
(PCB mount) ^a
R_thJA
R_thJA
Maximum Junction-to-Case (Drain)
R_thJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.7
UNIT
°C/W
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
V_DS
V_DS/T_J
V_GS(th)
I_GSS
I_DSS
R_DS(on)
g_fs
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
L_D
Internal Source Inductance
L_S
Gate Input Resistance
R_g
Drain-Source Body Diode Characteristics
V_GS = 0, I_D = -250 μA
Reference to 25 °C, I_D = -1 mA
V_DS = V_GS, I_D = -250 μA
V_GS = ± 20 V
V_DS = -200 V, V_GS = 0 V
V_DS = -160 V, V_GS = 0 V, T_J = 125 °C
V_GS = -10 V
I_D = -3.9 A ^b
V_DS = -50 V, I_D = -3.9 A ^b
-200
-
-2.0
-
-
-
-
2.8
-
-0.24
-
-
-
-
-
-
-
-
-4.0
± 100
- 100
-500
0.80
-
V
V/°C
V
nA
μA

S
V_GS = 0 V,
V_DS = -25 V,
f = 1.0 MHz, see fig. 5
-
700
-
-
200
-
pF
-
40
-
-
V_GS = -10 V
I_D = -6.5 A, V_DS = -160 V,
see fig. 6 and 13 ^b
-
-
-
29
-
5.4
nC
-
15
-
12
-
V_DD = -100 V, I_D = -6.5 A,
R_g = 12 , R_D = 15 , see fig. 10 ^b
-
27
-
ns
-
28
-
-
24
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
f = 1 MHz, open drain
-
4.5
-
nH
-
7.5
-
0.6
-
3.7

Continuous Source-Drain Diode Current
I_S
MOSFET symbol
showing the 
Pulsed Diode Forward Current ^a
integral reverse
I_SM
p - n junction diode
D
G
S
-
-
-6.5
A
-
-
-26
Body Diode Voltage
V_SD
T_J = 25 °C, I_S = -6.5 A, V_GS = 0 V ^b
-
-
-6.5
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
t_rr
Q_rr
T_J = 25 °C, I_F = -6.5 A, dI/dt = 100 A/μs ^b
-
-
200
300
ns
1.9
2.9
μC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by L_S and L_D)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
S16-0754-Rev. D, 02-May-16
2
Document Number: 91085
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