IRF644S Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)

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IRF644S, SiHF644S
Vishay Siliconix
V_DS
Vary t_p to obtain
required I_AS
R_g
10 V
t_p
L
D.U.T
I_AS
0.01 Ω
+
- ^{V DD}
Fig. 12a - Unclamped Inductive Test Circuit
V_DS
V_DS
t_p
V_DD
I_AS
Fig. 12b - Unclamped Inductive Waveforms
1200
1000
800
600
Top
Bottom
I_D
6.3 A
8.9 A
14 A
400
200
0 ^{VDD = 50 V}
25
50
75
100
125
150
91040_12c
Starting T_J, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
V_GS
Q_GS
V_G
Q_G
Q_GD
Charge
Fig. 13a - Basic Gate Charge Waveform
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - ^VDS
V_GS
3 mA
I_G
I_D
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
S16-0754-Rev. D, 02-May-16
5
Document Number: 91040
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