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IRF644S Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A)
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IRF644S, SiHF644S
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient 
(PCB mount) a
RthJA
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
TYP.
-
-
-
MAX.
62
40
1.0
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 8.4 A b
VDS = 50 V, ID = 8.4 A b
250
-
-
V
-
0.34
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
μA
-
-
250
-
-
0.28

6.7
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Internal Source Inductance
LS
Gate Input Resistance
Rg
Drain-Source Body Diode Characteristics
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1300
-
-
330
-
pF
-
85
-
-
VGS = 10 V
ID = 7.9 A, VDS = 200 V,
see fig. 6 and 13 b
-
-
-
68
-
11
nC
-
35
-
11
-
VDD = 125 V, ID = 7.9 A,
Rg = 9.1 , RD = 8.7 , see fig. 10 b
-
24
-
ns
-
53
-
-
49
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
G
S
f = 1 MHz, open drain
-
4.5
-
nH
-
7.5
-
0.3
-
1.2

Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the 
integral reverse
Pulsed Diode Forward Current a
ISM
p - n junction diode
D
G
S
-
-
14
A
-
-
56
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 V b
-
-
1.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
-
TJ = 25 °C, IF = 7.9 A, dI/dt = 100 A/μs b
-
250
500
ns
2.3
4.6
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
S16-0754-Rev. D, 02-May-16
2
Document Number: 91040
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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