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| IRF644S Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=14A) | |||
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www.vishay.com
150 °C
101
25 °C
100
10-1
0.5
91040_07
VGS = 0 V
0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
103
5
2
102
5
2
10
5
2
1
1
91040_08
Operation in this area limited
by RDS(on)
10 µs
100 µs
TC = 25 °C
TJ = 150 °C
Single Pulse
1 ms
10 ms
2
5 10 2
5 102 2
5 103
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10
IRF644S, SiHF644S
Vishay Siliconix
14
12
10
8
6
4
2
0
25
91040_09
50
75
100
125
150
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ⤠1 µs
Duty factor ⤠0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
1
0 â 0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
10-5
91040_11
Single Pulse
(Thermal Response)
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (s)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1
10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S16-0754-Rev. D, 02-May-16
4
Document Number: 91040
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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