DG604_11 Datasheet, PDF (5/12 Pages) Vishay Siliconix – 1.0 pC Charge Injection, 100 pA Leakage, 4-Channel Multiplexer

DG604
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
Parameter
Analog Switch
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
V_{IN A0, A1 and ENABLE} = 1.4 V, 0.6 V^a Temp.^b
Typ.^c
- 40 °C to + 125 °C - 40 °C to + 85 °C
Min.^d Max.^d Min.^d Max.^d
Unit
Analog Signal Range^e
On-Resistance
On-Resistance Match
V_ANALOG
R_DS(ON)
R_ON
I_S = 1 mA, V_D = + 1.5 V
I_S = 1 mA, V_D = + 1.5 V
Full
Room 200
Full
Room 5
Full
3
3
V
245
245
325
290

6
11
13
6
Switch Off
Leakage Current
(for 14 pin TSSOP)
I_S(off)
I_D(off)
V+ = 3 V, V- = 0 V
V_D = 1 V/3 V, V_S = 3 V/1 V
Room ± 0.01 - 0.1
0.1
- 0.1 0.1
Full
- 18
18
- 0.5 0.5
Room ± 0.01 - 0.1
0.1
- 0.1 0.1
Full
- 18
18
- 0.5 0.5
Channel On Leakage
Current (for 14 pin TSSOP)
Switch Off
Leakage Current
(for 16 pin miniQFN)
I_D(on)
I_S(off)
I_D(off)
V+ = 3 V, V- = 0 V
V_S = V_D = 1 V/3 V
V+ = 3.3 V, V- = 0 V
V_D = 1 V/3 V, V_S = 3 V/1 V
Room
Full
Room
Full
Room
Full
± 0.01
± 0.01
± 0.01
- 0.1
- 18
-1
- 18
-1
- 18
0.1
- 0.1 0.1
18
- 0.5 0.5
1
-1
1
nA
18
-2
2
1
-1
1
18
-2
2
Channel On
Leakage Current
(for 16 pin miniQFN)
I_D(on)
V+ = 3.3 V, V- = 0 V
Room ± 0.01 - 1
1
-1
1
V_D = 1 V/3 V, V_S = 3 V/1 V
Full
- 18
18
-2
2
Digital Control
Input Current, V_IN Low
I_L
Input Current, V_IN High
I_H
V_{IN A0, A1 and ENABLE}
Under Test = 0.6 V
V_{IN A0, A1 and ENABLE}
Under Test = 1.4 V
Full 0.005 - 1
1
-1
1
µA
Full 0.005 - 1
1
-1
1
Input Capacitance
C_IN
f = 1 MHz
Room 4.3
pF
Dynamic Characteristics
Transition Time
Enable Turn-On Time
Enable Turn-Off Time
t_TRANS
Room 95
Full
t_ON(EN)
V_S(CLOSE) = 3 V, V_S(OPEN) = 0 V,
R_L = 300 , C_L = 35 pF
Room
Full
77
t_OFF(EN)
Room 35
Full
130
130
190
160
108
108
161
131
ns
76
76
112
88
Break-Before-Make-Time
t_BMM
Room 45
Full
5
5
Charge Injection
Off-Isolation^e
Crosstalk^e
Bandwidth^e
Total Harmonic Distortion
Source Off Capacitance^e
Drain Off Capacitance^e
Channel On Capacitance^e
Power Supplies
Q
OIRR
X_TALK
BW
THD
C_S(off)
C_D(off)
C_D(on)
C_L = 1 nF, R_GEN = 0 , V_GEN = 0 V
f = 10 MHz, R_L = 50 , C_L = 5 pF
R_L = 50 
Signal = 1 V_RMS, 20 Hz to 20 kHz,
R_L = 600 
Full
Room
Room
Room
Room
f = 1 MHz
Room
0.1
- 58
- 90
290
0.09
3.1
11.7
16.5
pC
dB
MHz
%
pF
Power Supply Current
I+
Room 0.001
0.5
0.5
Full
1
1
Negative Supply Current
I-
V_IN = 0 V, or V+
Room - 0.001 - 0.5
Full
-1
- 0.5
-1
µA
Ground Current
I_GND
Room - 0.001 - 0.5
Full
-1
- 0.5
-1
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69934
www.vishay.com
S11-1429-Rev. C, 18-Jul-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000