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DG428_11 Datasheet, PDF (5/14 Pages) Vishay Siliconix – Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers
DG428, DG429
Vishay Siliconix
SPECIFICATIONSa (for single supply)
Parameter
Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V, WR = 0,
RS = 2.4 V, VIN = 2.4 V, 0.8 Vf
Temp.b
Typ.c
A Suffix
- 55°C to 125 °C
Min.d Max.d
D Suffix
- 40 °C to 85 °C
Min.d Max.d
Unit
Analog Switch
Analog Signal Rangee
VANALOG
Full
0
12
0
12
V
Drain-Source
On-Resistance
RDS(on)
VD = ± 10 V, VAL = 0.8 V
IS = - 500 µA, VAH = 2.4 V
Room 80
150
150 
RDS(on) Matchg
Source Off Leakage Current
Drain Off Leakage Current
RDS(on)
0 V < VS < 10 V
IS = - 1 mA
Room 5
%
IS(off)
VS = 0 V, 10 V,
Room ± 0.03 - 0.5
0.5
- 0.5
0.5
VEN = 0 V, VD = 10 V, 0 V
Full
- 50
50
- 50
50
ID(off)
VD = 0 V, 10 V
VS = 10 V, 0 V
VEN = 0 V
DG428
Room ± 0.07
Full
-1
- 100
1
100
-1
- 100
1
100
DG429
Room
Full
± 0.05
-1
- 50
1
50
-1
- 50
1
50
nA
Drain On Leakage Current
ID(on)
VS = VD = 0 V, 10 V
VEN = 2.4 V
VAL= 0.8 V
VAH = 2.4 V
DG428
DG429
Room
Full
Room
Full
± 0.07
± 0.05
-1
- 100
-1
- 50
1
100
1
50
-1
- 100
-1
- 50
1
100
1
50
Digital Control
Logic Input Current
Input Voltage High
Logic Input Current
Input Voltage Low
IAH
VA = 2.4 V
Full
VA = 12 V
Full
IAL
VEN = 0 V, 2.4 V, VA = 0 V
RS = 0 V, WR = 0 V
Full
1
1
1
1
µA
-1
-1
Dynamic Characteristics
Transition Time
tTRANS
S1 = 10 V/ 2 V, S8 = 2 V/ 10 V Room
See Figure 5
Full
160
280
350
280
350
Break-Before-Make Interval
Enable and WriteTurn-On Time
tOPEN
tON(EN,WR)
See Figure 4
S1 = 5 V
See Figure 6 and 7
Room 40
25
25
Full
10
10
Room 110
300
300
ns
Full
400
400
Enable and Reset Turn-Off Time tOFF(EN,RS)
S1 = 5 V
See Figure 6 and 8
Room 70
Full
300
400
300
400
Charge Injection
Q
VGEN = 6 V, RGEN = 0 
CL = 1 nF, See Figure 9
Room 4
pC
VEN = 0 V, RL = 300 
Off Isolation
OIRR
CL = 15 pF, VS = 7 VRMS
Room - 75
dB
f = 100 kHz
Minimum Input Timing Requirements
Write Pulse Width
tW
Full
100
100
AX, EN Data Set Up time
AX, EN Data Hold Time
tS
See Figure 2
Full
100
tH
Full
10
100
ns
10
Reset Pulse Width
tRS
VS = 5 V, See Figure 3
Full
100
100
Power Supplies
Positive Supply Current
I+
VEN = 0 V, VA = 0, RS = 5 V Room 20
100
100 µA
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
( ) g. RDS(on) = RDS(on) MAX – RDS(on) MIN
RDS(on) AVE
x 100 %
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70063
www.vishay.com
S11-1350–Rev. K, 04-Jul-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000