DG411 Datasheet, PDF (5/8 Pages) Vishay Siliconix – Precision Monolithic Quad SPST CMOS Analog Switches

DG411/412/413
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Analog Voltage
40
30
V+ = 15 V
20
V– = –15 V
V_L = 5 V
10
T_A = 25_C
I_D(off)
0
I_S(off)
–10
–20
I_D(on)
–30
–40
–50
–60
–15 –10
–5
0
5
10
15
V_D or V_S — Drain or Source Voltage (V)
I_D, I_S Leakages vs. Temperature
35
V+ = 15 V
V– = –15 V
30
V_L = 5 V
125_C
25
85_C
20
25_C
15
–55_C
10
5
–15 –10
–5
0
5
10
15
V_D – Drain Voltage (V)
Charge Injection vs. Analog Voltage
100
V+ = 15 V
80
V– = –15 V
V_L = 5 V
60
40
C_L = 10 nF
20
0
C_L = 1 nF
–20
–40
–60
–15
–10
–5
0
5
10
15
V_S – Source Voltage (V)
Charge Injection vs. Analog Voltage
140
120
V+ = 15 V
V– = –15 V
100
V_L = 5 V
C_L = 10 nF
80
60
C_L = 1 nF
40
20
0
–20
–40
–60
–15
–10
–5
0
5
10
15
V_D – Drain Voltage (V)
Input Switching Threshold vs. Supply Voltage
3.5
3.0
2.5
V_L = 7.5 V
2.0
6.5 V
1.5
1.0
4.5 V
5.5 V
0.5
0
(V+) 5
10 15 20 25 30 35 40
Switching Time vs. Temperature
240
210
V+ = 15 V
V– = –15 V
V_L = 5 V
180
V_S = 10 V
150
t_ON
120
t_OFF
90
60
30
0
–55 –35 –15
5 25 45 65
Temperature (_C)
85 105 125
Document Number: 70050
S-52433—Rev. D, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
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