DG411 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Precision Monolithic Quad SPST CMOS Analog Switches

DG411/412/413
Vishay Siliconix
SPECIFICATIONS^a FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Specified
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Parameter
Analog Switch
Symbol
V+ = 12 V, V– = 0 V
V_L = 5 V, V_IN = 2.4 V, 0.8 V^f
Temp^b Typ^c Min^d Max^d Min^d Max^d Unit
Analog Signal Range^e
Drain-Source
On-Resistance
V_ANALOG
r_DS(on)
Dynamic Characteristics
V+ = 10.8 V, I_S = –10 mA
V_D = 3 V, 8 V
Full
Room
40
Full
12
12
V
80
100
80
100
W
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
t_ON
R_L = 300 W, C_L = 35 pF
Room
175
Hot
t_OFF
V_S = 8 V, See Figure 2
Room
95
Hot
t_D
DG413 Only, V_S = 8 V,
R_L = 300 W, C_L = 35 pF
Room
25
Q
V_g = 6 V, R_g = 0 W, C_L = 10 nF
Room
25
Power Supplies
250
250
400
315
125
140
125
140
ns
pC
Positive Supply Current
I+
Room
0.0001
1
Hot
5
Negative Supply Current
I–
Logic Supply Current
I_L
V+ = 13.5, V_IN = 0 or 5 V
Room –0.0001
–1
–1
Hot
–5
–5
Room
0.0001
1
Hot
5
Ground Current
I_GND
Room –0.0001
–1
–1
Hot
–5
–5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V_IN = input voltage to perform proper function.
1
5
mA
1
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. V_D and Power Supply Voltage
50
45 ^{TA = 25_C}
"5 V
40
35
30
25
"15 V
20
"8 V
"10 V
"12 V
15
"20 V
10
5
0
–20 –15 –10 –5 0 5 10 15 20
V_D – Drain Voltage (V)
On-Resistance vs. V_D and Unipolar Supply Voltage
300
250
V+ = 3 V
V_L = 3 V
200
V_L = 5 V
150
V+ = 5 V
100
8V
50
12 V
15 V _{20 V}
0
0 2 4 6 8 10 12 14 16 18 20
V_D – Drain Voltage (V)
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Document Number: 70050
S-52433—Rev. D, 06-Sep-99