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DG411 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Precision Monolithic Quad SPST CMOS Analog Switches
◁
DG411/412/413
Vishay Siliconix
SPECIFICATIONSa
Parameter
Symbol
Analog Switch
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
rDS(on)
Switch Off
Leakage Current
Channel On
Leakage Current
IS(off)
ID(off)
ID(on)
Digital Control
Input Current, VIN Low
IIL
Input Current, VIN High
IIH
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Break-Before-Make
Time Delay
Charge Injection
Off Isolatione
Channel-to-Channel Cross-
talke
Source Off Capacitancee
Drain Off Capacitancee
Channel On Capacitancee
Power Supplies
tON
tOFF
tD
Q
OIRR
XTALK
CS(off)
CD(off)
CD(on)
Positive Supply Current
I+
Negative Supply Current
I–
Logic Supply Current
Ground Current
IL
IGND
Test Conditions
Unless Specified
V+ = 15 V, V– = –15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
A Suffix
–55 to 125_C
D Suffix
–40 to 85_C
Tempb Typc Mind Maxd Mind Maxd Unit
V+ = 13.5 V, V– = –13.5 V
IS = –10 mA, VD = "8.5 V
V+ = 16.5, V– = –16.5 V
VD = "15.5 V, VS = #15.5 V
V+ = 16.5 V, V– = –16.5 V
VS = VD = "15.5 V
Full
–15
15
–15
15
V
Room
25
Full
35
45
35
45
W
Room
Full
"0.1
–0.25 0.25 –0.25 0.25
–20
20
–5
5
Room
Full
"0.1
–0.25 0.25 –0.25 0.25
–20
20
–5
5
nA
Room
"0.1
–0.4
0.4
–0.4
0.4
Full
–40
40
–10
10
VIN Under Test = 0.8 V
VIN Under Test = 2.4 V
Full
0.005
–0.5
0.5
–0.5
0.5
mA
Full
0.005
–0.5
0.5
–0.5
0.5
RL = 300 W, CL = 35 pF
VS = "10 V See Figure 2
DG413 Only, VS = 10 V
RL = 300 W, CL = 35 pF
Vg = 0 V, Rg = 0 W, CL = 10 nF
RL = 50 W, CL = 5 pF,
f = 1 MHz
f = 1 MHz
Room
110
Full
Room
100
Full
Room
25
Room
5
Room
68
Room
85
Room
9
Room
9
Room
35
175
175
240
220
145
160
145
160
ns
pC
dB
pF
V+ = 16.5, V– = –16.5 V
VIN = 0 or 5 V
Room 0.0001
1
1
Full
5
5
Room –0.0001
–1
–1
Full
–5
–5
mA
Room 0.0001
1
1
Full
5
5
Room –0.0001
–1
–1
Full
–5
–5
Document Number: 70050
S-52433—Rev. D, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
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