BFR96TS_08 Datasheet, PDF (5/9 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR96TS
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
800
700
600
500
400
300
200
100
0
0
16780
25 50 75 100 125 150
T_amb – Ambient Temperature (°C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
5
4
f = 800 MHz
3
2
1
0
0
13599
f = 500 MHz
V_CE = 10 V
Z_S = 50 Ω
10 20 30 40 50 60 70
I_C – Collector Current ( mA )
Figure 4. Noise Figure vs. Collector Current
7000
6000
5000
4000
3000
2000
1000
0
0
13597
V_CE = 10 V
f = 500 MHz
20
40
60
80 100
I_C – Collector Current ( mA )
Figure 2. Transition Frequency vs. Collector Current
2.0
1.6
1.2
0.8
0.4
0.0
0
13598
f = 1 MHz
4
8
12
16
20
V_CB – Collector Base Voltage ( V )
Figure 3. Collector Base Capacitance vs. Collector Base Voltage
Document Number 85037
Rev. 1.6, 08-Sep-08
www.vishay.com
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