BFR96TS_08 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

Not for new design, this product will be obsoleted soon
BFR96TS
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
3
• High power gain
• Low noise figure
e3
• High transition frequency
• Lead (Pb)-free component
2
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
RF amplifier up to GHz range specially for wide band
antenna amplifier.
Mechanical Data
Case: TO-50 Plastic case
Weight: approx. 111 mg
Marking: BFR96TS
Pinning: 1 = Collector, 2 = Emitter, 3 = Base
3B
2
E
1
1C
19039
Electrostatic sensitive device.
Observe precautions for handling.
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 45 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
20
V
V_CEO
15
V
V_EBO
2.5
V
I_C
100
mA
P_tot
700
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
R_thJA
150
K/W
1) _{on glass fibre printed board (40 x 25 x 1.5) mm}3 _{plated with 35 μm Cu}
Document Number 85037
Rev. 1.6, 08-Sep-08
www.vishay.com
1