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BFR96TS_08 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor
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BFR96TS
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 20 V, VBE = 0
Collector-base cut-off current VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2.5 V, IC = 0
Collector-emitter breakdown
voltage
IC = 5 mA, IB = 0
DC forward current transfer ratio VCE = 10 V, IC = 70 mA
Symbol
Min
Typ.
Max
Unit
ICES
100
μA
ICBO
100
nA
IEBO
10
μA
V(BR)CEO
15
V
hFE
25
75
150
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
VCE = 10 V, IC = 70 mA,
fT
f = 500 MHz
5
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.85
pF
Collector-emitter capacitance VCE = 10 V, f = 1 MHz
Cce
0.4
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
3.5
pF
Noise figure
VCE = 10 V, IC = 70 mA,
F
ZS = 50 Ω, f = 500 MHz
3.3
dB
VCE = 10 V, IC = 70 mA,
F
ZS = 50 Ω, f = 800 MHz
4.0
dB
Power gain
VCE = 10 V, IC = 70 mA,
Gpe
11.5
dB
ZS = 50 Ω, ZL = ZLopt,
f = 800 MHz
Linear output voltage - two tone VCE = 10 V, IC = 70 mA,
V1 = V2
500
mV
intermodulation test
dIM = 60 dB, f1 = 806 MHz,
f2 = 810 MHz, ZS = ZL = 50 Ω
Third order intercept point
VCE = 10 V, IC = 70 mA,
IP3
f = 800 MHz
37
dBm
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2
Document Number 85037
Rev. 1.6, 08-Sep-08
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