71061 Datasheet, PDF (5/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4831DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
MOSFET
0.2
0.1 ^0.1
0.05
0.02
Single Pulse
0.01
10^–4
10^–3
10^–2
10^–1
1
10
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Reverse Current vs. Junction Temperature
40
5
10
SCHOTTKY
Forward Voltage Drop
1
0.1
30 V
0.01
10 V
T_J = 150_C
1
T_J = 25_C
0.001
0.0001
0
25
50
75
100 125 150
T_J – Junction Temperature (_C)
500
0.1
0
Capacitance
0.2
0.4
0.6
0.8
V_F – Forward Voltage Drop (V)
400
300
200
100
Document Number: 71061
S-61859—Rev. A, 10-Oct-99
0
0
6
12
18
24
30
V_KA – Reverse Voltage (V
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