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71061 Datasheet, PDF (2/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode
Si4831DY
Vishay Siliconix
New Product
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (t v 10 sec)a
Maximum Junction-to-Ambient (t = steady state)a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Device
MOSFET
Schottky
MOSFET
Schottky
MOSFET
Schottky
Symbol
RthJA
RthJF
Typical
52
56
82
91
27
32
Maximum
62.5
68
100
110
33
40
Unit
_C/W
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = –250 mA
VDS = 0 V, VGS = "20 V
VDS = –24 V, VGS = 0 V
VDS = –24 V, VGS = 0 V, TJ = 75_C
VDS w –5 V, VGS = –10 V
VGS = –10 V, ID = –5 A
VGS = –4.5 V, ID = –3.5 A
VDS = –15 V, ID = –5 A
IS = –1.7 A, VGS = 0 V
–1.0
–20
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = –15 V, VGS = –5 V, ID = –5 A
VDD = –15 V, RL = 15 W
ID ^ –1 A, VGEN = –10 V, RG = 6 W
IF = –1.7 A, di/dt = 100 A/ms
Typ
0.036
0.060
9
–0.75
10
4.5
3.6
13
15
37
14
35
Max Unit
V
"100
nA
–1
mA
–10
A
0.045
W
0.090
S
–1.2
V
20
nC
25
30
70
ns
30
70
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
IF = 3 A
IF = 3 A, TJ = 125_C
Vr = 30 V
Vr = 30 V, TJ = 75_C
Vr = 30 V, TJ = 125_C
Vr = 15 V
www.vishay.com S FaxBack 408-970-5600
2-2
Typ
0.485
0.42
0.008
0.4
6.5
102
Max
0.53
0.47
0.1
5
20
Unit
V
mA
pF
Document Number: 71061
S-61859—Rev. A, 10-Oct-99