71061 Datasheet, PDF (3/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET with Schottky Diode

New Product
Si4831DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 10 thru 5 V
16
16
MOSFET
Transfer Characteristics
12
4V
8
4
0
0
0.16
3V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.12
0.08
V_GS = 4.5 V
0.04
V_GS = 10 V
0
0
4
8
12
16
20
I_D – Drain Current (A)
Gate Charge
10
V_DS = 10 V
I_D = 5.7 A
8
6
4
2
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
12
8
4
0
0
1500
1200
T_C = 125_C
25_C
–55_C
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Capacitance
C_iss
900
600
C_oss
300
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 5.7 A
1.4
1.2
1.0
0.8
0.6
0.4
–50 –25
0 25 50 75 100 125 150
T_J – Junction Temperature (_C)
Document Number: 71061
S-61859—Rev. A, 10-Oct-99
www.vishay.com S FaxBack 408-970-5600
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