VS-VSKT230-16 Datasheet, PDF (4/10 Pages) Vishay Siliconix – SCR/SCR and SCR/Diode

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350
300
250
200
150
100
50
0
0
180°
120°
90°
60°
30°
RMS limit
Ø
Conduction Angle
VSK.230..Series
Per Junction
T_J = 130 °C
50
100
150
200
250
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
350
180°
300
120°
90°
60°
DC
250
30°
200
150 ^{RMS limit}
100
50
Ø
Conduction Period
VSK.230..Series
Per Junction
T_J = 130 °C
0
0 50 100 150 200 250 300 350 400
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
VS-VSK.230..PbF Series
Vishay Semiconductors
7000
6500
6000
5500
At any rated load condition and with
rated V_RRM applied following surge
Initial T_J = 130 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
5000
4500
4000
3500 VSK.230..Series
Per Junction
3000
1
10
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
7500
7000
6500
6000
5500
5000
Maximum non repetitive surge current
vs. pulse drain duration.Control of
conduction may not be maintained.
Initial T_J = 130 °C
No voltage reapplied
Rated V_RRM applied
4500
4000
3500 ^{VSK.230..Series}
Per Junction
3000
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
700
600
Ø
Ø
500
Conduction Angle
400
300
180°
120°
90°
60°
30°
00000...3.2.112652K0KKKK/.1/W///WWWWK/W0.08 ^K/W
200
100
0
0
VSK.230..Series
Per Module
T_J = 130 °C
100
200 300
400
Total RMS Output Current (A)
500 20
40 60
80 100 120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
Revision: 17-Jul-14
4
Document Number: 93053
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