VS-VSKT230-16 Datasheet, PDF (2/10 Pages) Vishay Siliconix – SCR/SCR and SCR/Diode

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VS-VSK.230..PbF Series
Vishay Semiconductors
ON-STATE CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle on-state
non-repetitive, surge current
SYMBOL
I_T(AV)
I_T(RMS)
I_TSM
Maximum I²t for fusing
I²t
Maximum I²âˆšt for fusing
Low level value or threshold voltage
High level value of threshold voltage
Low level value on-state slope resistance
High level value on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
Maximum latching current
I²âˆšt
V_T(TO)1
V_T(TO)2
r_t1
r_t2
V_TM
I_H
I_L
TEST CONDITIONS
180° conduction, half sine wave
As AC switch
t = 10 ms
No voltage
t = 8.3 ms
reapplied
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
Sinusoidal
half wave,
t = 10 ms
No voltage
initial
t = 8.3 ms
reapplied
T_J = T_J maximum
t = 10 ms
t = 8.3 ms
100 % V_RRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x I_T(AV) < I < π x I_T(AV)), T_J = T_J maximum
(I > π x I_T(AV)), T_J = T_J maximum
(16.7 % x π x I_T(AV) < I < π x I_T(AV)), T_J = T_J maximum
(I > π x I_T(AV)), T_J = T_J maximum
I_TM = π x I_T(AV), T_J = T_J maximum, 180° conduction,
average power = V_T(TO) x I_T(AV) + r_f x (I_T(RMS))²
Anode supply = 12 V, initial I_T = 30 A, T_J = 25 °C
Anode supply = 12 V, resistive load = 1 Ω,
gate pulse: 10 V, 100 μs, T_J = 25 °C
VALUES
230
85
510
7500
7850
6300
6600
280
256
198
181
2800
1.03
1.07
0.77
0.73
1.59
500
1000
UNITS
A
°C
A
kA²s
kA²âˆšs
V
mΩ
V
mA
SWITCHING
PARAMETER
Typical delay time
Typical rise time
Typical turn-off time
SYMBOL
t_d
t_r
t_q
TEST CONDITIONS
T_J = 25 °C, gate current = 1 A dI_g/dt = 1 A/μs
V_d = 0.67 % V_DRM
I_TM = 300 A; dI/dt = 15 A/μs; T_J = T_J maximum;
V_R = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 Ω
VALUES
1.0
2.0
50 to 150
UNITS
μs
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
Critical rate of rise of off-state voltage
SYMBOL
I_RRM,
I_DRM
V_INS
dV/dt
TEST CONDITIONS
T_J = T_J maximum
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
T_J = T_J maximum, exponential to 67 % rated V_DRM
VALUES
50
3000
1000
UNITS
mA
V
V/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
P_GM
P_G(AV)
+ I_GM
- V_GT
Maximum required DC gate voltage to trigger V_GT
Maximum required DC gate current to trigger
Maximum gate voltage that will not trigger
Maximum gate current that willnot trigger
Maximum rate of rise of turned-on current
I_GT
V_GD
I_GD
dI/dt
TEST CONDITIONS
t_p ≤ 5 ms, T_J = T_J maximum
f = 50 Hz, T_J = T_J maximum
t_p ≤ 5 ms, T_J = T_J maximum
t_p ≤ 5 ms, T_J = T_J maximum
T_J = - 40 °C
T_J = 25 °C
T_J = T_J maximum
Anode supply = 12 V,
resistive load; Ra = 1 Ω
T_J = - 40 °C
T_J = 25 °C
T_J = T_J maximum
Anode supply = 12 V,
resistive load; Ra = 1 Ω
T_J = T_J maximum, rated V_DRM applied
T_J = T_J maximum, rated V_DRM applied
T_J = T_J maximum, I_TM = 400 A, rated V_DRM applied
VALUES
10.0
2.0
3.0
5.0
4.0
3.0
2.0
350
200
100
0.25
10.0
500
UNITS
W
A
V
mA
V
mA
A/μs
Revision: 17-Jul-14
2
Document Number: 93053
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