VS-VSKT230-16 Datasheet, PDF (3/10 Pages) Vishay Siliconix – SCR/SCR and SCR/Diode

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VS-VSK.230..PbF Series
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction operating temperature range
Storage temperature range
Maximum thermal resistance,
junction to case per junction
T_J
T_Stg
R_thJC
DC operation
Typical thermal resistance,
case to heatsink per module
R_thCS Mounting surface flat, smooth and greased
MAP to heatsink
A mounting compound is recommended and the
Mounting torque ± 10 %
busbar to MAP
torque should be rechecked after a period of about 3 h
to allow for the spread of the compound.
Approximate weight
Case style
VALUES
-40 to 130
-40 to 150
0.125
0.02
UNITS
°C
K/W
4 to 6
Nm
500
g
17.8
oz.
MAGN-A-PAK
ΔR CONDUCTION PER JUNCTION
DEVICES
VSK.230-
SINUSOIDAL CONDUCTION AT T_J MAXIMUM
180°
120°
90°
60°
30°
0.009 0.010 0.010 0.020 0.032
RECTANGULAR CONDUCTION AT T_J MAXIMUM
180°
120°
90°
60°
30°
0.007
0.011
0.015
0.020
0.033
Note
• Table shows the increment of thermal resistance R_thJC when devices operate at different conduction angles than DC
UNITS
K/W
130
VSK.230..Series
120
R_thJC (DC) = 0.125 K/W
110
Ø
Conduction Angle
100
90
30°
80
60°
90°
70
120°
180°
60
0
40
80 120 160 200 240
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
130
VSK.230..Series
120
R_thJC (DC) = 0.125 K/W
110
Ø
Conduction Period
100
90
80
70
60
0
30°
60°
90°
120°
180°
DC
50 100 150 200 250 300 350 400
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Revision: 17-Jul-14
3
Document Number: 93053
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