VS-P100 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Power Modules, Passivated Assembled Circuit Elements, 25 A

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130
Fully turned-on
120
110
180°
(Rect.)
100
90
180°
(Sine)
80
Per module
70
0
5
10
15
20
25
30
93754_04
Total Output Current (A)
Fig. 4 - Current Ratings Characteristics
1000
T_J = 25 °C
100
T_J = 125 °C
10
Per junction
1
0
1
2
3
4
5
6
93754_05
Instantaneous On-State Voltage (V)
Fig. 5 - On-State Voltage Drop Characteristics
10
Steady state value
R_thJC = 2.24 K/W
(DC operation)
1
VS-P100 Series
Vishay Semiconductors
350
At any rated load condition and with
rated V_RRM applied following surge.
Initial T_J = 125 °C
300
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
250
200
Per junction
150
1
10
100
93754_06
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
400
Maximum non-repetitive surge current
versus pulse train duration. Control of
350
conduction may not be maintained.
Initial T_J = 125 °C
300
No voltage reapplied
Rated V_RRM reapplied
250
200
150
Per junction
100
0.01
0.1
1
93754_07
Pulse Train Duration (s)
Fig. 7 - Maximum Non-Repetitive Surge Current
0.1
0.01
0.0001
93754_08
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z_thJC Characteristics
Per junction
10
Revision: 27-Mar-14
4
Document Number: 93754
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