VS-P100 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Power Modules, Passivated Assembled Circuit Elements, 25 A

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VS-P100 Series
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink
Mounting torque, base to heatsink ⁽¹⁾
T_J, T_Stg
R_thJC
R_thCS
DC operation
Mounting surface, smooth and greased
-40 to 125
°C
2.24
K/W
0.10
4
Nm
Approximate weight
58
g
2.0
oz.
Case style
PACE-PAK (D-19)
Note
(1) _{A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound}
60
50 ^~
40
30
20
+
-
180°
(sine)
60
50
R
40
2 _K/W ^{thSA =} 15 _K/W
30
3 _K/W
- _ΔR
5 _K/W
20
7 _K/W
10
0
0
T_J = 125 °C
5
10
15
20
25
10
10 _K/W
0
0
25
50
75
100
125
93754_01a
Total Output Current (A)
93754_01b
Maximum Allowable
Ambient Temperature (°C)
Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)
15
180°
120°
10
90°
60°
30°
RMS limit
5
0
0
93754_02
Ø
Conduction angle
T_J = 125 °C
Per junction
5
10
15
Average On-State Current (A)
Fig. 2 - On-State Power Loss Characteristics
20
DC
180°
15
120°
90°
60°
30°
10
RMS limit
5
0
0
93754_03
Ø
Conduction period
T_J = 125 °C
Per junction
5
10
15
20
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
Revision: 27-Mar-14
3
Document Number: 93754
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