VS-HFA16TB120SHM3 Datasheet, PDF (4/7 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

www.vishay.com
VS-HFA16TB120SHM3
Vishay Semiconductors
1600
1400
1200
1000
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
I_F = 16 A
I_F = 8 A
800
600
400
200
0
100
1000
dI_F/dt (A/μs)
Fig. 7 - Typical Stored Charge vs. dI_F/dt (Per Leg)
I_F
0
(3)
t_rr
t_a
t_b
(2) _IRRM
(4)
Q_rr
0.5 I_RRM
dI_(rec)M/dt ⁽⁵⁾
0.75 I_RRM
(1) ^dIF^/dt
(1) dI_F/dt - rate of change of current
through zero crossing
(2) I_RRM - peak reverse recovery current
(3) t_rr - reverse recovery time measured
from zero crossing point of negative
going I_F to point where a line passing
through 0.75 I_RRM and 0.50 I_RRM
extrapolated to zero current.
(4) Q_rr - area under curve defined by t_rr
and I_RRM
Q_rr =
t_rr x I_RRM
2
(5) dI_(rec)M/dt - peak rate of change of
current during t_b portion of t_rr
Fig. 8 - Reverse Recovery Waveform and Definitions
Revision: 28-Nov-14
4
Document Number: 94991
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000