VS-HFA16TB120SHM3 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA16TB120SHM3
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode
breakdown voltage
V_BR
I_R = 100 μA
Maximum forward voltage
Maximum reverse 
leakage current
Junction capacitance
Series inductance
I_F = 16 A
V_FM
I_F = 32 A
See fig. 1
I_F = 16 A, T_J = 125 °C
I_RM
V_R = V_R rated
T_J = 125 °C, V_R = 0.8 x V_R rated
See fig. 2
C_T
V_R = 200 V
See fig. 3
L_S
Measured lead to lead 5 mm from package body
MIN.
1200
-
-
-
-
-
-
-
TYP.
-
2.5
3.2
2.3
0.75
375
27
8.0
MAX.
-
3.0
3.93
2.7
20
2000
40
-
UNITS
V
μA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP.
Reverse recovery time
See fig. 5 and 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
t_rr
t_rr1
t_rr2
I_RRM1
I_RRM2
Q_rr1
Q_rr2
I_F = 1.0 A, dI_F/dt = 200 A/μs, V_R = 30 V
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
I_F = 16 A
dI_F/dt = 200 A/μs
V_R = 200 V
T_J = 125 °C
-
30
-
90
-
164
-
5.8
-
8.3
-
260
-
680
MAX.
-
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance, 
junction to case
Thermal resistance, 
junction to ambient
T_lead
R_thJC
R_thJA
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Weight
Marking device
Case style D²PAK
MIN.
-
-
-
-
-
TYP.
-
-
MAX.
300
0.83
-
80
2.0
-
0.07
-
HFA16TB120SH
UNITS
°C
K/W
g
oz.
100
10
T_J = 150 °C
T_J = 125 °C
T_J = 25 °C
1
0.1
0
2
4
6
8
V_FM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
1000
T_J = 150 °C
100
T_J = 125 °C
10
1
T_J = 25 °C
0.1
0.01
0
200 400 600 800 1000 1200
V_R - Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
Revision: 28-Nov-14
2
Document Number: 94991
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