VS-HFA16TB120SHM3 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Ultrafast and ultrasoft recovery

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VS-HFA16TB120SHM3
Vishay Semiconductors
HEXFRED^®
Ultrafast Soft Recovery Diode, 16 A
D²PAK
2
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I_RRM and Q_rr
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 1 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
N/C
3
Anode
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
PRODUCT SUMMARY
Package
I_F(AV)
V_R
V_F at I_F
t_rr (typ.)
T_J max.
Diode variation
TO-263AB (D²PAK)
16 A
1200 V
3.0 V
30 ns
150 °C
Single die
DESCRIPTION
VS-HFA16TB120SHM3 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16TB120SHM3 is especially well suited for use
as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED^® product
line features extremely low values of peak recovery current
(I_RRM) and does not exhibit any tendency to “snap-off”
during the t_b portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16TB120SHM3 is
ideally suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V_R
I_F
I_FSM
I_FRM
Maximum power dissipation
P_D
Operating junction and storage temperature range T_J, T_Stg
TEST CONDITIONS
T_C = 100 °C
T_C = 25 °C
T_C = 100 °C
MAX.
1200
16
190
64
151
60
-55 to +150
UNITS
V
A
W
°C
Revision: 28-Nov-14
1
Document Number: 94991
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000