VS-HFA08SD60S-M3 Datasheet, PDF (4/8 Pages) Vishay Siliconix – Ultrafast recovery time

www.vishay.com
80
70
I_F = 16 A
I_F = 8 A
60
I_F = 4 A
50
40
30
20
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
10
100
1000
dI_F/dt (A/µs)
Fig. 5 - Typical Reverse Recovery Time vs. dI_F/dt
20
I_F = 16 A
I_F = 8 A
15
I_F = 4 A
10
5
0
100
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
1000
dI_F/dt (A/µs)
Fig. 6 - Typical Recovery Current vs. dI_F/dt
VS-HFA08SD60S-M3
Vishay Semiconductors
500
V_R = 200 V
T_J = 125 °C
400 ^{TJ = 25 °C}
I_F = 16 A
300 ^{IF = 8 A}
I_F = 4 A
200
100
0
100
1000
dI_F/dt (A/µs)
Fig. 7 - Typical Stored Charge vs. dI_F/dt
10 000
V_R = 200 V
T_J = 125 °C
T_J = 25 °C
1000
I_F = 16 A
I_F = 8 A
I_F = 4 A
100
100
1000
dI_F/dt (A/µs)
Fig. 8 - Typical dI_(rec)M/dt vs. dI_F/dt
Revision: 10-Jul-15
4
Document Number: 93474
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000